欢迎光临生产计划制定方法。江苏利民饲料（集团）公司

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Quality Assurance
Quality PolicyQuality SystemReliability
Quality Policy
ZIENER has always been committed to making GaN the main power semiconductor
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ZIENER has always been committed to making GaN the main power semiconductor

We adhere to a customer-oriented approach, continuously improve product and process quality, and deliver highly reliable GaN power devices to our customers. We pursue high-quality development, without sacrificing safety and the environment, adhere to the concept of prevention in advance, ensure the occupational health and life and property safety of relevant parties, pay attention to ecological environment protection and sustainable development, and ensure the safety, stability, and sustainable operation of the company. 


Quality System
ZIENER has a full quality management system
ISO9001：2015中文版(1)(1)
Aass through ISO 9001:2015
certified management system
Reliability
Ziener owns complete wafer-level, package-level and system-level reliability testing capability.


NoTest itemsTest conditionsNumberDetermine
1MSL3 Preconditioning

1.125℃@24Hrs;

2.30℃ 60%RH@192Hrs(or 60℃ 60%RH@40Hrs)；

3.260℃@3 times

3x77ea0 lose efficacy&Meets layering requirements
2

Thermal Cycling

-55℃ to 150℃@500cycle3x77ea

0 lose efficacy


3

Intermittent Operational Life

△Tj≥100℃, ton/toff=2min @15000Cycles3x77ea

0 lose efficacy


4

Highly Accelerated Temperature and HumidityStress Test

130℃ 85%RH@96 Hrs3x77ea

0 lose efficacy


5

Highly Accelerated Temperature and HumidityStress Test

130℃85%RH, Vds=100V@96Hrs3x77ea

0 lose efficacy


6High temperature High Humidity Reverse Bias85℃85%RH, Vds=80% x ratedVds@1000Hr3x77ea

0 lose efficacy


7

Solderability

Steam aging 93C@8h 

Test temperature: 245 +/- 5

3x10ea≥95% solder coating
8

High Temperature Reverse Bias

Cascode: 150℃, Vds=80% x ratedVds@1000Hrs3x77ea0 lose efficacy
9High Temperature Gate Bias(positive bias）Cascode: 150℃, Vgs=+20V@1000Hr3x77ea0 lose efficacy
10

High Temperature Gate Bias(negative bias)

HEMT: 150℃ Vgs= -40V & Vds=0 @1000Hr3x77ea0 lose efficacy
11

High Temperature Storage

150℃ @1000 Hrs3x77ea0 lose efficacy
12

Low Temperature Storage

-55℃ @1000Hrs

3x77ea0 lose efficacy
13

Human Body Model ESD

According to the requirements of the product

1x3ea0 lose efficacy
14Charged Device Model ESD

According to the requirements of the product

1x3ea0 lose efficacy
15

Switching Accelerated Life Test

Boost: Tc=120℃,Vds=500V,f=20KHz,Duty=1%@168H


1x10ea0 lose efficacy & Rdson meet a requirement
16Dynamic High-Temperature Operating-Life Test

Adjust testing conditions based on product application scenarios

for example Full-bridge: 

DCM,Tc=120℃,Vds=600V,f=100KHZ,Duty=10%@1000H

1x40ea

0 lose efficacy


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