We employ advanced GaN-on-Silicon epitaxial technology for power electronic power application. The epitaxial wafer features a sophisticated (Al, Ga) N multilayer structure grown by metal organic chemical vapor deposition (MOCVD) on a (111) silicon substrate with diameters of 150mm/200mm.
Specifically tailored for high-voltage (650V) devices, we have pioneered a 6/8-inch GaN epitaxial buffer technology. The optimized design of the high-voltage buffer ensures attributes such as low leakage currents, high breakdown voltage, minimal buffer dispersion, and low wafer bowing.
To meet customer’s requirements for various applications, we offer versatile combinations of cap and barrier layers, which include standard D-mode HEMT structures with in-situ SiN passivation or GaN cap layers, as well as standard E-mode structures with p-GaN cap layers, both resulting in excellent device performance and robustness.
The advantages of high uniformity, high yield, cost-effective substrates, and streamlined epitaxial processes will drive cost reduction, enabling GaN HEMTs to be applied in a wider range of fields.
