In the Cascode GaN technical route, the design combine the advantages of easy driving of Si MOS devices (excellent compatibility with traditional Si device system), wide gate voltage driving range (±20V), high gate reliability, high voltage sustainability, low conduction loss and fast switching speed.
Cascode GaN devices are insusceptible to gate loop noise caused by malfunctions since they have a comparatively higher threshold voltage. In the application of the Cascode GaN device, the reverse conduction loss can be effectively reduced attributable to integrating with an e-mode Si MOS device which has lower reverse conduction voltage drop.
In the D-mode GaN roadmap, with the great qualities of the high voltage blocking capability, high reliability and low dynamic loss, D-mode GaN devices which is growth on high-quality epitaxial sub-layer and fabricated with stable process flow show extraordinary market competitiveness.
